? 2010 ixys corporation, all rights reserved ds99041f(11/10) hiperfast tm igbts w/ diode features z very high frequency igbt z square rbsoa z high current handling capability applications z uninterruptible power supplies (ups) z switch-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z v ery fast switching speeds for high frequency applications z high power surface mountable packages g = gate c = collector e = emitter tab = collector ixgt40n60c2d1 ixgj40n60c2d1 IXGH40N60C2D1 c2-class high speed igbts v ces = 600v i c110 = 40a v ce(sat) 2.7v t fi(typ) = 32ns to-268 (ixgt) c (tab) e g to-247 (ixgh) g e c to-268 (ixgj) g e c c (tab) c (tab) symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( limited by lead) 75 a i c110 t c = 110c 40 a i cm t c = 25c, 1ms 200 a ssoa v ge = 15v, t j = 125c, r g = 10 i cm = 80 a (rbsoa) clamped inductive load v ce v ces p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified ) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 200 a t j = 125c 3 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 2.2 2.7 v t j = 125c 1.7 v
ixys reserves the right to change limits, test conditions, and dimensions. ixgt40n60c2d1 ixgj40n60c2d1 IXGH40N60C2D1 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 20 36 s c ies 2500 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 220 pf c res 54 pf q g 95 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 14 nc q gc 36 nc t d(on) 18 ns t ri 20 ns t d(off) 90 140 ns t fi 32 ns e off 0.20 0.37 mj t d(on) 18 ns t ri 20 ns e on 0.60 mj t d(off) 130 ns t fi 80 ns e off 0.50 mj r thjc 0.42 c/w r thcs to-247 & to-268 0.25 c/w inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 400v, r g = 3 note 2 i nductive load, t j = 125c i c = 30a, v ge = 15v v ce = 400v, r g = 3 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.5 v t j = 150c 1.6 v i rm t j = 100c 4 a t rr t j = 100c 100 ns 25 ns r thjc 0.9 c/w i f = 30a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v to-268 outline 1 = gate 2,4 = collector 3 = emitter to-268 leaded outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 outline 1 2 3 1 = gate 2 = collector 3 = emitter 1 = gate 2,4 = collector 3 = emitter ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2010 ixys corporation, all rights reserved ixgt40n60c2d1 ixgj40n60c2d1 IXGH40N60C2D1 fig. 2. extended output characteristics @ 25 deg. c 0 30 60 90 12 0 15 0 18 0 210 0 123 45 67 v c e - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 9v 5v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 0.5 1 1.5 2 2.5 3 3.5 v c e - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 7v 5v 9v fig. 6. input admittance 0 30 60 90 12 0 15 0 18 0 210 45678910 v g e - volts i c - amperes t j = 1 25 o c 25 o c -40 o c fig. 4. t emperature dependence of v ce(sat) 0.6 0.7 0.8 0.9 1 1. 1 1. 2 1. 3 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 60a i c = 30a i c = 1 5a v g e = 1 5v fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 1. 5 2 2.5 3 3.5 4 5 6 7 8 9101112131415 v g e - volts v c e - volts t j = 25 o c i c = 60a 30a 1 5 a
ixys reserves the right to change limits, test conditions, and dimensions. ixgt40n60c2d1 ixgj40n60c2d1 IXGH40N60C2D1 fig. 12. capacitance 10 10 0 10 0 0 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 m hz fig. 11. gate charge 0 3 6 9 12 15 0 20406080100 q g - nanocoulombs v g e - volts v c e = 300v i c = 30a i g = 1 0ma fig. 7. transconductance 0 10 20 30 40 50 60 70 0 306090120150180 i c - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 8. dependence of e off on r g 0 0.2 0.4 0.6 0.8 1 1 .2 1 .4 1 .6 1 .8 24681 01 21 41 6 r g - ohms e off - millijoule s i c = 45a i c = 1 5a t j = 1 25 o c v g e = 1 5v v c e = 400v i c = 30a i c = 60a fig. 10. dependence of e off on t emperature 0 0.2 0.4 0.6 0.8 1 1. 2 1. 4 1. 6 25 50 75 100 125 t j - degrees centigrade e off - millijoule s i c = 60a v g e = 1 5v v c e = 400v r g = 3 ohm s r g = 1 0 ohms - - - - - i c = 45a i c = 30a i c = 1 5a fig. 9. dependence of e off on i c 0 0.2 0.4 0.6 0.8 1 1. 2 1. 4 1. 6 10 20 30 40 50 60 i c - amperes e off - millijoule s r g = 3 ohms r g = 1 0 ohms - - - - - v g e = 1 5v v c e = 400v t j = 1 25 o c t j = 25 o c
? 2010 ixys corporation, all rights reserved ixgt40n60c2d1 ixgj40n60c2d1 IXGH40N60C2D1 fig. 13. maximum transient thermal impedance 0.01 0.1 0 1 .00 0.0001 0.001 0.01 0.1 1 1 0 pulse width - seconds z (th) j c - (oc/w)
ixys reserves the right to change limits, test conditions, and dimensions. ixgt40n60c2d1 ixgj40n60c2d1 IXGH40N60C2D1 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 16. peak reverse current i rm versus -di f /dt fig. 15. reverse recovery charge q r versus -di f /dt fig. 14. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 18. recovery time t rr versus -di f /dt fig. 19. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 20. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 t vj =25c t vj =100c t vj =150c fig. 17. dynamic parameters q r , i rm versus t vj 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 04080120160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06 ixys ref: g_40n60c2(5y)12-11-06-b
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